| ‘? _ VS-50WQ10FNPbF7 www'V'Shay'C°m Vishay Semiconductors ELEcTRIcAL sPEc PARAMETER TEST coNDITIoNS Maximum forward voltage dropSee ?g" 1 _E Maximum reverse leakage currentSee fig. 2 VR med VR Threshold voltage TJ :TJ maximum Fonli/ard slope resistance Typical junction capacitance VH : 5 VDC (test signal range 100 kHz to 1 MHZ), 25 “C Typical series inductance Measured lead to lead 5 mm from package body Note(I) Pulse Width < 300 us, duty CyC|e < 2 % THERMAL - MEcHAIIIcAL sPEcIFIcATIoNs PARAMETER TEST CONDITIONS Maximum junction and storage T H) T _ 40to150 temperature range J ’ S‘g Maximum thermal resistance, DC operation See fig. 4junction to case Marking device 250WQ10FNdPi < 1 thermal runaway condition for a diode on its own heatsink dTJ RthJA Revision: 29-May-13 2 Document Number: 94235 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@Vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.comzdoc?9100!! |